| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | -15V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | -10V |
| 集电极连续输出电流ICCollector Current(IC) | -1A |
| 截止频率fTTranstion Frequency(fT) | 130MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 130~350 |
| 管压降VCE（sat）Collector-Emitter SaturationVoltage | -1.2V |
| 耗散功率PcPoWer Dissipation | 150mW/0.15W |
| Description & Applications | PNP Silicon epitaxial planar transistor For low-frequency amplification Features • Large current capacitance • Low collector to emitter saturation voltage • Small type package, allowing downsizing and thinning of the equipment |
| 描述与应用 | PNP硅外延平面晶体管 对于低频放大 特点 •大电流容量 •低集电极到发射极饱和电压 •小型封装，允许裁员和变薄的设备 |