| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | -60V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | −60V |
| 集电极连续输出电流ICCollector Current(IC) | -3A |
| 截止频率fTTranstion Frequency(fT) | 5MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 100~400 |
| 管压降VCE（sat）Collector-Emitter SaturationVoltage | -1000mV/-1V |
| 耗散功率PcPoWer Dissipation | 1W |
| Description & Applications | Silicon Power Transistors High speed switching Features DC current gain is high. There is a Z type as a surface-mount products. |
| 描述与应用 | 硅功率晶体管 高速开关 特点 直流电流增益高。 有一个Z型作为表面贴装产品。 |