| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | -80V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | −80V |
| 集电极连续输出电流ICCollector Current(IC) | −300mA/-0.3A |
| 截止频率fTTranstion Frequency(fT) | 100MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 200~400 |
| 管压降VCE（sat）Collector-Emitter SaturationVoltage | -300mV/-0.3V |
| 耗散功率PcPoWer Dissipation | 2W |
| Description & Applications | PNP silicon epitaxial transistor power mini mold high collector to emitter saturation voltage； complementary to 2SD1001 |
| 描述与应用 | PNP硅外延晶体管 电源小型模具 高集电极到发射极饱和电压; 2SD1001互补 |