| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | -100V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | −80V |
| 集电极连续输出电流ICCollector Current(IC) | -1A |
| 截止频率fTTranstion Frequency(fT) | 80MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 90~180 |
| 管压降VCE（sat）Collector-Emitter SaturationVoltage | -290mV/-0.29V |
| 耗散功率PcPoWer Dissipation | 2W |
| Description & Applications | PNP silicon epitaxial transistor power mini mold high collector to base voltage； excellent DC current gain linearity； complementary to 2SD1005 |
| 描述与应用 | PNP硅外延晶体管电源小型模具 高集电极基极电压; 优良的直流电流增益线性度; 2SD1005互补 |