| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) |
-100V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) |
−100V |
| 集电极连续输出电流ICCollector Current(IC) |
-700mA/-0.7A |
| 截止频率fTTranstion Frequency(fT) |
75MHz |
| 直流电流增益hFEDC Current Gain(hFE) |
135~270 |
| 管压降VCE（sat）Collector-Emitter SaturationVoltage |
-400mV/-0.4V |
| 耗散功率PcPoWer Dissipation |
2W |
| Description & Applications |
PNP silicon epitaxial transistor power mini mold high collector to emitter complementary to 2SD1006 and 2SD1007 |
| 描述与应用 |
PNP硅外延晶体管电源小型模具 高集电极到发射极电压; 互补2SD1006 2SD1007 |