| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | -40V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | −32V |
| 集电极连续输出电流ICCollector Current(IC) | −300mA/-0.3A |
| 截止频率fTTranstion Frequency(fT) | 200MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 5000 |
| 管压降VCE（sat）Collector-Emitter SaturationVoltage | -1.5V |
| 耗散功率PcPoWer Dissipation | 200mW/0.2W |
| Description & Applications | High-gain Amplifier Transistor Features 1) Darlington connection for high DC current gain. 2) Built-in 4kΩ resistor between base and emitter. 3) Complements the 2SD1383K. |
| 描述与应用 | 高增益放大器晶体管 特点 1）达林顿连接高直流电流增益。 2）内置4KΩ基极和发射极之间的电阻。 3）补充2SD1383K |