| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | −130V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | −80V |
| 集电极连续输出电流ICCollector Current(IC) | -5A |
| 截止频率fTTranstion Frequency(fT) | 30MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 130~560 |
| 管压降VCE（sat）Collector-Emitter SaturationVoltage | −500mV/-0.5V |
| 耗散功率PcPoWer Dissipation | 1.3W |
| Description & Applications | Silicon PNP epitaxial planar type For Power switching Complementary to 2SD1256 ■ Features • Low collector-emitter saturation voltage VCE(sat) • Satisfactory linearity of forward current transfer ratio hFE • Large collector current IC • N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. |
| 描述与应用 | PNP硅外延平面型 电源开关 互补2SD1256 ■特点 •低集电极 - 发射极饱和电压VCE（星期六） •良好的线性正向电流传输比HFE •大集电极电流IC •N型包可以直接焊接在印刷电路板等的小型电子设备的散热片。 |