| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 25V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 20V |
| 集电极连续输出电流ICCollector Current(IC) | 20mA |
| 截止频率fTTranstion Frequency(fT) | 500MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 56~120 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | 100mV/0.1V |
| 耗散功率PcPower Dissipation | 150mW/0.15W |
| Description & Applications | NPN Silicon epitaxial Transistors RF amplifier Features High transition frequency. Low output capacitance. Low base resistance for high gain and excellent noise response. |
| 描述与应用 | NPN硅外延晶体管 RF放大器 特点 高转换频率。 低输出电容。 基数低电阻，高增益和优良的噪声响应 |