| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 30V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 20V |
| 集电极连续输出电流ICCollector Current(IC) | 20mA |
| 截止频率fTTranstion Frequency(fT) | 600MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 60~120 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | 300mV/0.3V |
| 耗散功率PcPower Dissipation | 150mW/0.15W |
| Description & Applications | NPN Silicon epitaxial planar type For high-frequency amplification Features Mirco package High gain bandwidth product Low output capacitance |
| 描述与应用 | NPN硅外延平面型 对于高频放大 特点 MIRCO包 高增益带宽积 低输出电容 |