| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 35V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 35V |
| 集电极连续输出电流ICCollector Current(IC) | 50mA |
| 截止频率fTTranstion Frequency(fT) | |
| 直流电流增益hFEDC Current Gain(hFE) | 260~520 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | 700mV/0.7V |
| 耗散功率PcPower Dissipation | 200mW/0.2W |
| Description & Applications | NPN Silicon epitaxial planar type For low-frequency and low-noise amplification Complementary to 2SA1034 Features Low noise voltage NV. High forward current transfer ratio hFE. Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. |
| 描述与应用 | NPN硅外延平面型 对于低频和低噪声放大 互补2SA1034 特点 低噪声电压NV。 高正向电流传输比HFE。 迷你型包装，让瘦身带包装盒包装的设备和通过自动插入。 |