| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 35V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 35V |
| 集电极连续输出电流ICCollector Current(IC) | 500mA/0.5A |
| 截止频率fTTranstion Frequency(fT) | |
| 直流电流增益hFEDC Current Gain(hFE) | 100~200 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | 600mV/0.6V |
| 耗散功率PcPower Dissipation | 150mW/0.15W |
| Description & Applications | NPN Silicon epitaxial Transistors Application • Low frequency amplifier • Complementary pair with 2SA1121 |
| 描述与应用 | NPN硅外延晶体管 应用 •低频放大器 •互补型2SA1121 |