集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 60V |
集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 50V |
集电极连续输出电流ICCollector Current(IC) | 150mA/0.15A |
截止频率fTTranstion Frequency(fT) | 80MHz |
直流电流增益hFEDC Current Gain(hFE) | 120~240 |
管压降VCE(sat)Collector-Emitter Saturation Voltage | 250mV/0.25V |
耗散功率PcPower Dissipation | 150mW/0.15W |
Description & Applications | NPN Silicon epitaxial Transistors
.Audio frequency general purpose amplifier applications.
Features: High voltage and high current, Excellent hFE linearity ,High hFE, Low noise ,Small package, Complementary to 2SA1162. |
描述与应用 | NPN硅外延晶体管, 音频通用放大器. 特点: 高电压和高电流, 优秀HFE线性, 高HFE, 低噪音, 小型封装, 互补2SA1162. |