| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 55V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 50V |
| 集电极连续输出电流ICCollector Current(IC) | 150mA/0.15A |
| 截止频率fTTranstion Frequency(fT) | 180MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 300~600 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | 150mV/0.15V |
| 耗散功率PcPower Dissipation | 200mW/0.2W |
| Description & Applications | NPN Silicon epitaxial planer type Low frequency general purpose amplifier applications Features Mini package faciliates miniaturization in end products. High breakdown voltage |
| 描述与应用 | NPN硅外延平面型 低频通用放大器应用 特点 迷你包以利于在终端产品的小型化。 高击穿电压 |