| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 30V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 20V |
| 集电极连续输出电流ICCollector Current(IC) | 30mA |
| 截止频率fTTranstion Frequency(fT) | 320MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 40~80 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | |
| 耗散功率PcPower Dissipation | 150mW/0.15W |
| Description & Applications | NPN Silicon epitaxial planar Transistors High frequency general purpose Amp appliations Features Very small package enabling compactness and slimness of set. High fT and small Cre |
| 描述与应用 | NPN硅外延平面型晶体管 高频通用放大器应用进展 特点 非常小的包装，使紧凑和纤细的设置。 高FT和低Cre |