| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 35V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 30V |
| 集电极连续输出电流ICCollector Current(IC) | 800mA/0.8A |
| 截止频率fTTranstion Frequency(fT) | 120MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 100~200 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | 500mV/0.5V |
| 耗散功率PcPower Dissipation | 500mW/0.5W |
| Description & Applications | NPN Silicon epitaxial Transistors Audio frequency Amplifier applications Features High DC current gain Suitable for output stage of 1W amplifier Small flat package Complementary to 2SA1204 |
| 描述与应用 | NPN硅外延晶体管 音频放大器应用 特点 高直流电流增益 适合1W放大器的输出级 小扁平封装 互补型2SA1204 |