| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 20V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 7V |
| 集电极连续输出电流ICCollector Current(IC) | 30mA |
| 截止频率fTTranstion Frequency(fT) | 6.5Ghz |
| 直流电流增益hFEDC Current Gain(hFE) | 120 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | 100mV/0.1V |
| 耗散功率PcPower Dissipation | 150mW/0.15W |
| Description & Applications | NPN Silicon epitaxial planar Transistors UHF~C band low noise amplifier applications Features High gain Low noise figure High fT |
| 描述与应用 | NPN硅外延平面型晶体管 UHF〜C波段低噪声放大器的应用 特点 高增益 低噪声系数 高FT |