| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) |
50V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) |
50V |
| 集电极连续输出电流ICCollector Current(IC) |
200mA/0.2A |
| 截止频率fTTranstion Frequency(fT) |
200MHz |
| 直流电流增益hFEDC Current Gain(hFE) |
400~800 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage |
300mV/0.3V |
| 耗散功率PcPower Dissipation |
150mW/0.15W |
| Description & Applications |
NPN Silicon epitaxial Transistors For high frequency amplify applications Features Low collector to emitter saturation voltage Excellent linearity of DC forward current gain super mini package for easy mounting. |
| 描述与应用 |
NPN硅外延晶体管 对于高频放大的应用 特点 集电极到发射极饱和电压低 优秀的线性的直流正向电流增益 易于安装的超小型封装。 |