| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 30V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 25V |
| 集电极连续输出电流ICCollector Current(IC) | 30mA |
| 截止频率fTTranstion Frequency(fT) | 200MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 55~110 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | 300mV/0.3V |
| 耗散功率PcPower Dissipation | 150mW/0.15W |
| Description & Applications | NPN Silicon epitaxial Transistors For high frequency amplify ,oscillating, frequency exchange,medium frequency amplify applications Features High gain Low noise super mini package for easy mounting. |
| 描述与应用 | NPN硅外延晶体管 对于高频放大，振荡频率交换，中频放大应用 特点 高增益 低噪音 易于安装的超小型封装。 |