| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 55V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 50V |
| 集电极连续输出电流ICCollector Current(IC) | 150mA/0.15A |
| 截止频率fTTranstion Frequency(fT) | 100MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 100~960 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | 500mV/0.5V |
| 耗散功率PcPower Dissipation | 200mW/0.2W |
| Description & Applications | NPN Silicon epitaxial Transistors Differential amp ,current mirror ,temperature compensator. Features Excellent in thermal equilibrium and suited for use in differential amp applications. Matched pair capability. |
| 描述与应用 | NPN硅外延晶体管 差分放大器，电流镜，温度补偿器。 特点 很棒处于热平衡状态，适合于使用在差分放大器中的应用。 配对能力。 |