| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 60V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 50V |
| 集电极连续输出电流ICCollector Current(IC) | 150mA/0.15A |
| 截止频率fTTranstion Frequency(fT) | 100MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 200~400 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | 500mV/0.5V |
| 耗散功率PcPower Dissipation | 200mW/0.2W |
| Description & Applications | NPN Silicon epitaxial Transistors For AF applications features High VEBO Wide ASO and high durability against breakdown Complementary to 2SA1252 |
| 描述与应用 | NPN硅外延晶体管 对于AF应用 特点 高VEBO 宽的ASO和高耐久性反对击穿 互补型2SA1252 |