| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) |
180V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) |
160V |
| 集电极连续输出电流ICCollector Current(IC) |
80mA |
| 截止频率fTTranstion Frequency(fT) |
150MHz |
| 直流电流增益hFEDC Current Gain(hFE) |
90~180 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage |
700mV/0.7V |
| 耗散功率PcPower Dissipation |
200mW/0.2W |
| Description & Applications |
NPN Silicon epitaxial Transistors High-voltage switching, AF power Amp,100w output predriver applications Features Small-sized package permitting the 2SC3361-applied sets to be made small and slim. High breakdown voltage Small output capacitance Complementary to 2SA1257 |
| 描述与应用 |
NPN硅外延晶体管 高压开关，自动对焦放大器，100W输出功率前置驱动器应用 特点 小型包装允许2SC3361应用设置小型和超薄。 高击穿电压 小的输出电容 互补型2SA1257 |