| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 35V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 25V |
| 集电极连续输出电流ICCollector Current(IC) | 800mA/0.8A |
| 截止频率fTTranstion Frequency(fT) | 120MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 100~200 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | 400mV/0.4V |
| 耗散功率PcPower Dissipation | 200mW/0.2W |
| Description & Applications | NPN Epitaxial Silicon Transistors Applications Low frequency power amplifer applications Power switching applications Features Higjh DC current gain Low saturation voltage Complementary to 2SA1298 |
| 描述与应用 | NPN外延硅晶体管 应用 低频电源放大器应用 电源开关应用 特点 Higjh直流电流增益 低饱和电压 互补2SA1298 |