| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 120V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 120V |
| 集电极连续输出电流ICCollector Current(IC) | 100mA/0.1A |
| 截止频率fTTranstion Frequency(fT) | 100MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 200~400 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | 300mV/0.3V |
| 耗散功率PcPower Dissipation | 150mW/0.15W |
| Description & Applications | NPN Silicon epitaxial Transistors Audio frequency low power amplifier applications Excellent hFE linearity High voltage Low noise High hFE small package Complementary to 2SA1312 |
| 描述与应用 | NPN硅外延晶体管 音频频率低功耗放大器应用 优秀HFE线性 高压 低噪音 高HFE 小包装 互补型2SA1312 |