| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 50V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 20V |
| 集电极连续输出电流ICCollector Current(IC) | 300mA/0.3A |
| 截止频率fTTranstion Frequency(fT) | 30MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 350~1200 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | 100mV/0.1V |
| 耗散功率PcPower Dissipation | 150mW/0.15W |
| Description & Applications | NPN Silicon epitaxial Transistors For muting and switching applications HIgh emitter-base voltage High reverse hFE Low on resistance High DC current gain small package |
| 描述与应用 | NPN硅外延晶体管 对于静音和开关应用 发射极 - 基极电压高 高反向HFE 低导通电阻 高直流电流增益 小包装 |