| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) |
200V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) |
200V |
| 集电极连续输出电流ICCollector Current(IC) |
100mA/0.1A |
| 截止频率fTTranstion Frequency(fT) |
160MHz |
| 直流电流增益hFEDC Current Gain(hFE) |
200~450 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage |
300mV/0.3V |
| 耗散功率PcPower Dissipation |
200mW/0.2W |
| Description & Applications |
NPN Silicon epitaxial Transistors High voltage amplifier and switching Features High voltage High DC current gain Complementary to 2SA1330 |
| 描述与应用 |
NPN硅外延晶体管 高电压放大器和开关 特点 高压 高直流电流增益 互补型2SA1330 |