| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 60V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 50V |
| 集电极连续输出电流ICCollector Current(IC) | 500mA/0.5A |
| 截止频率fTTranstion Frequency(fT) | 300MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 200~400 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | 400mV/0.4V |
| 耗散功率PcPower Dissipation | 200mW/0.2W |
| Description & Applications | NPN Silicon epitaxial Transistors High speed switching applications applications switching circuit, inverter circuit,interface circuit,driver circuit Features High collector breakdown voltage Large current capacity and high fT Very Small-size package Complementary to 2SA1338 |
| 描述与应用 | NPN硅外延晶体管 高速开关应用 应用程序 开关电路，逆变电路，接口电路，驱动电路 特点 高集电极击穿电压 大电流容量和高FT 非常小的尺寸封装 互补型2SA1338 |