| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) |
25V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) |
20V |
| 集电极连续输出电流ICCollector Current(IC) |
700mA/0.7A |
| 截止频率fTTranstion Frequency(fT) |
180MHz |
| 直流电流增益hFEDC Current Gain(hFE) |
150~300 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage |
500mV/0.5V |
| 耗散功率PcPower Dissipation |
150mW/0.15W |
| Description & Applications |
NPN Silicon epitaxial Transistors for high current drive applications Complementary to 2SA1365 Features Low collector to emitter saturation voltage Excellent linearity of DC forward current gain High gain band width product High collector current Super mini package for easy mounting |
| 描述与应用 |
NPN硅外延晶体管 为高电流驱动应用 互补型2SA1365 特点 集电极到发射极饱和电压低 出色的线性的直流正向电流增益 高增益带宽产品 高集电极电流 易于安装的超小型封装 |