| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 55V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 50V |
| 集电极连续输出电流ICCollector Current(IC) | 400mA/0.4A |
| 截止频率fTTranstion Frequency(fT) | 150MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 150~300 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | 500mV/0.5V |
| 耗散功率PcPower Dissipation | 150mW/0.15W |
| Description & Applications | NPN Silicon epitaxial Transistors for general purpose high current drive applications Complementary to 2SA1366 Features High Vceo Excellent linearity of DC forward current gain High gain band width product High collector current Complementary to 2SA1366 |
| 描述与应用 | NPN硅外延晶体管 通用的高电流驱动应用 互补2SA1366 特点 高VCEO 出色的线性的直流正向电流增益 高增益带宽产品 高集电极电流 互补型2SA1366 |