| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) |
300V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) |
200V |
| 集电极连续输出电流ICCollector Current(IC) |
200mA/0.2A |
| 截止频率fTTranstion Frequency(fT) |
50MHz |
| 直流电流增益hFEDC Current Gain(hFE) |
100~200 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage |
1.5V |
| 耗散功率PcPower Dissipation |
2W |
| Description & Applications |
NPN SILICON EPITAXIAL TRANSIStOR Description High Voltage Switching,especially in Hybrid integrated circuits. Features world standard miniature package High voltage |
| 描述与应用 |
NPN硅外延晶体管 描述 高压开关，尤其是在混合集成电路。 特点 世界标准的微型封装 高压 |