| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 20V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 10V |
| 集电极连续输出电流ICCollector Current(IC) | 65mA |
| 截止频率fTTranstion Frequency(fT) | 9Ghz |
| 直流电流增益hFEDC Current Gain(hFE) | 125~250 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | |
| 耗散功率PcPower Dissipation | 200mW/0.2W |
| Description & Applications | MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSIStOR Description The 2SC3583 is an NPN epitaxial silicon transistor designed for use in low-noise and small signal amplifiers from VHF band to UHF band. The 2SC3585 features excellent power gain with very low-noise figures. The2SC3585 employs direct nitride passivated base surface process (DNPprocess) which is an NEC proprietary new fabrication technique which provides excellent noise figures at high current values. This allows excellent associated gain and very wide dynamic range. |
| 描述与应用 | 微波低噪声放大器 NPN硅外延晶体管 描述 2SC3583 NPN外延硅晶体管为使用VHF频段UHF频段的低噪声和小信号放大器的设计。 2SC3585具有良好的功率增益非常低噪声数字。 The2SC3585采用直接氮化物钝化基面过程（DNPprocess）这是一个NEC专有的新的制造技术，提供极佳的噪声在高电流值的数字。这使得相关的收益和优异的动态范围很宽。 |