| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 120V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 100V |
| 集电极连续输出电流ICCollector Current(IC) | 200mA/0.2A |
| 截止频率fTTranstion Frequency(fT) | 150MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 500~2000 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | 500mV/0.5V |
| 耗散功率PcPower Dissipation | 500mW/0.5W |
| Description & Applications | NPN epitaxial planar Silicon Transistors Applications High hFE General-purpose Amp applications Low frequency amplifiers,Various drives, muting circuits Features High breakdown voltage High DC current gain Low Vce High VEBO Very small size making it easy to provide high-density. |
| 描述与应用 | NPN外延平面硅晶体管 应用 高HFE 通用放大器应用 低频放大器，各种驱动器，静音电路 特点 高击穿电压 高直流电流增益 低Vce 高VEBO 非常小的尺寸使其易于提供高密度。 |