| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 15V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 8V |
| 集电极连续输出电流ICCollector Current(IC) | 5mA |
| 截止频率fTTranstion Frequency(fT) | 4GHz |
| 直流电流增益hFEDC Current Gain(hFE) | 50~250 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | |
| 耗散功率PcPower Dissipation | 50mW |
| Description & Applications | NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION FEATURES • Low-voltage, low-current, low-noise and high-gain NF = 3.0 dB TYP. @VCE = 1 V, IC = 250 PA, f = 1.0 GHz GA = 3.5 dB TYP. @VCE = 1 V, IC = 250 PA, f = 1.0 GHz • Ideal for battery drive of pagers, compact radio equipment,cordless phones, etc. • Gold electrode gives high reliability. • Mini mold package, ideal for hybrid ICs. |
| 描述与应用 | NPN外延硅晶体管 高频低噪声放大 特点 •低电压，低电流，低噪声和高增益 NF= 3.0 dB（典型值）。 @ VCE= 1 V，IC=250 PA，F =1.0 GHz时 GA= 3.5 dB（典型值）。 @ VCE= 1 V，IC=250 PA，F =1.0 GHz时 •非常适于紧凑型无线电设备，无绳电话，等电池驱动的寻呼机， •金电极给出了很高的可靠性。 •迷你模具包装，混合集成电路的理想选择。 |