| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 20V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 12V |
| 集电极连续输出电流ICCollector Current(IC) | 2A |
| 截止频率fTTranstion Frequency(fT) | 80MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 400~800 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | 350mV/0.35V |
| 耗散功率PcPower Dissipation | 500mW/0.5W |
| Description & Applications | NPN Silicon Epitaxial Transistors Applications For high current drive application,camera shutter,solenoid drive circult. Features High hFE High collector current Low collector to emitter saturation voltage High collector dissipation Small package for mounting |
| 描述与应用 | NPN硅外延晶体管 应用 高电流驱动应用程序，相机的快门，电磁驱动器之内，。 特点 高HFE 高集电极电流 集电极到发射极饱和电压低 高集电极耗散 小安装包 |