集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) |
40V |
集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) |
15V |
集电极连续输出电流ICCollector Current(IC) |
200mA/0.2A |
截止频率fTTranstion Frequency(fT) |
750MHz |
直流电流增益hFEDC Current Gain(hFE) |
40~80 |
管压降VCE(sat)Collector-Emitter Saturation Voltage |
250mV/0.25V |
耗散功率PcPower Dissipation |
200mW/0.2W |
Description & Applications |
NPN Silicon Epitaxial Transistors Applications High speed switch Features High speed |
描述与应用 |
NPN硅外延晶体管 应用 高速开关 特点 高速 |