| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 20V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 12V |
| 集电极连续输出电流ICCollector Current(IC) | 100mA/0.1A |
| 截止频率fTTranstion Frequency(fT) | 5GHz |
| 直流电流增益hFEDC Current Gain(hFE) | 40~200 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | |
| 耗散功率PcPower Dissipation | 250mW/0.25W |
| Description & Applications | NPN Epitaxial Planar Silicon Transistors Applications UHF low-noise amplifiers ,wide-band amplifiers Features Small noise figure High power gain High cutoff frequency |
| 描述与应用 | NPN平面外延硅晶体管 应用 UHF低噪声放大器，宽带放大器 特点 噪声系数小 高功率增益 高截止频率 |