| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 30V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 12V |
| 集电极连续输出电流ICCollector Current(IC) | 50mA |
| 截止频率fTTranstion Frequency(fT) | 2GHz |
| 直流电流增益hFEDC Current Gain(hFE) | 82~180 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | 500mV/0.5V |
| 耗散功率PcPower Dissipation | 150mW/0.15W |
| Description & Applications | Epitaxial planar NPN Silicon transistor RF Amplifier High transition frequency High gain with low collector to base time constant Low level noise figure |
| 描述与应用 | 外延平面NPN硅晶体管 射频放大器 高转换频率 高增益，低集电极到基极时间常数 低水平噪声系数 |