| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 15V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 2.5V |
| 集电极连续输出电流ICCollector Current(IC) | 65mA |
| 截止频率fTTranstion Frequency(fT) | 8.5Ghz |
| 直流电流增益hFEDC Current Gain(hFE) | 120 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | |
| 耗散功率PcPower Dissipation | 200mW/0.2W |
| Description & Applications | Silicon NPN epitaxial planer type For 2GHz band low-noise amplification High transition frequency fT Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing |
| 描述与应用 | NPN硅外延平面型 用于2GHz频段低噪声放大 高转换频率FT 迷你型包装，通过带盒封装允许缩减设备规模和自动插入 |