| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 40V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 40V |
| 集电极连续输出电流ICCollector Current(IC) | 100mA/0.1A |
| 截止频率fTTranstion Frequency(fT) | 450MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 60~120 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | 170mV/0.17V |
| 耗散功率PcPower Dissipation | 150mW/0.15W |
| Description & Applications | Silicon NPN epitaxial planer type For high speed switching High-speed switching Low collector to emitter saturation voltage VCE(sat) S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing Allowing pair use with 2SA1739 |
| 描述与应用 | NPN硅外延平面型 用于高速切换 高速开关 低集电极到发射极饱和电压VCE（SAT） S-迷你型封装，通过带盒包装允许减小设备规模和自动插入 允许与2SA1739配对使用 |