| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 400V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 400V |
| 集电极连续输出电流ICCollector Current(IC) | 200mA/0.2A |
| 截止频率fTTranstion Frequency(fT) | 70MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 100~200 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | 600mV/0.6V |
| 耗散功率PcPower Dissipation | 1W |
| Description & Applications | NPN triple diffused planar Silicon transistor High-Voltage Driver Applications High breakdown voltage Adoption of MBIT process Excellent hFE linearity |
| 描述与应用 | NPN三重扩散平面硅晶体管 高电压驱动器应用 高击穿电压 通过MBIT过程 优秀HFE线性 |