| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) |
20V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) |
10V |
| 集电极连续输出电流ICCollector Current(IC) |
35mA |
| 截止频率fTTranstion Frequency(fT) |
10Ghz |
| 直流电流增益hFEDC Current Gain(hFE) |
125~250 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage |
|
| 耗散功率PcPower Dissipation |
200mW/0.2W |
| Description & Applications |
SILICON TRANSISTOR MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD Low Noise High Power Gains |
| 描述与应用 |
硅晶体管 微波低噪声放大器NPN硅外延晶体管4引脚MINI模具 低噪声 高功率增益 |