| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) |
30V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) |
19V |
| 集电极连续输出电流ICCollector Current(IC) |
50mA |
| 截止频率fTTranstion Frequency(fT) |
1.1GHz |
| 直流电流增益hFEDC Current Gain(hFE) |
56~120 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage |
200mV/0.2V |
| 耗散功率PcPower Dissipation |
100mW/0.1W |
| Description & Applications |
Epitaxial planar NPN Silicon transistor RF Amplifier High transition frequency Low output capacitance Low base resistance for high gain and excellent noise response |
| 描述与应用 |
外延平面NPN硅晶体管 射频放大器 高转换频率 低输出电容 低基极电阻和良好的噪声响应 |