| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 30V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 25V |
| 集电极连续输出电流ICCollector Current(IC) | 30mA |
| 截止频率fTTranstion Frequency(fT) | 1.1GHz |
| 直流电流增益hFEDC Current Gain(hFE) | 82~180 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | 500mV/0.5V |
| 耗散功率PcPower Dissipation | 200mW/0.2W |
| Description & Applications | Epitaxial planar NPN Silicon transistor Medium Power Amp Low feedback capacitance High transition frequency High gain with low collector to base time constant |
| 描述与应用 | 外延平面NPN硅晶体管 中等功率放大器 低反馈电容 高转换频率 高增益，低集电极到基级时间常数 |