| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 60V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 50V |
| 集电极连续输出电流ICCollector Current(IC) | 150mA/0.15A |
| 截止频率fTTranstion Frequency(fT) | 80MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 350~700 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | 100mV/0.1V |
| 耗散功率PcPower Dissipation | 100mW/0.1W |
| Description & Applications | TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) Audio Frequency General Purpose Amplifier Applications High voltage and high current: VCEO = 50 V, IC = 150 mA Excellent hFE linearity: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 High hFE: hFE = 70-700 Low noise: NF = 1dB (typ.), 10dB Complementary to 2SA1586 Small package |
| 描述与应用 | 东芝晶体管的硅NPN外延式（PCT的进程） 音频通用放大器应用 高电压和高电流：VCEO=50 V，IC=150毫安 优秀HFE线性：HFE（IC= 0.1毫安）/ HFE（IC= 2毫安）= 0.95 高HFE：HFE=70-700 低噪音：NF=1分贝（典型值），10分贝 与2SA1586互补 小型封装 |