| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 35V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 30V |
| 集电极连续输出电流ICCollector Current(IC) | 500mA/0.5A |
| 截止频率fTTranstion Frequency(fT) | 300MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 120~240 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | 100mV/0.1V |
| 耗散功率PcPower Dissipation | 100mW/0.1W |
| Description & Applications | TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) AUDIO FREQUENCY LOW POWER AMPLIFIER APPLICATIONS DRIVER STAGE AMPLIFIER APPLICATIONS SWITCHING APPLICATIONS Excellent hFE Linearity Complementary to 2SA1588 |
| 描述与应用 | 东芝晶体管的硅NPN外延式（PCT的进程） 低功耗音频放大器应用 驱动级放大器的应用 开关应用 优秀HFE线性 与2SA1588互补 |