| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) |
50V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) |
50V |
| 集电极连续输出电流ICCollector Current(IC) |
|
| 截止频率fTTranstion Frequency(fT) |
200MHz |
| 直流电流增益hFEDC Current Gain(hFE) |
270~560 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage |
300mV/0.3V |
| 耗散功率PcPower Dissipation |
200mW/0.2W |
| Description & Applications |
FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE(Super mini type) Small collector to emitter saturation voltage Excellent linearity of DC forward gain Super mini package for easy mounting |
| 描述与应用 |
用于低频放大应用 硅NPN外延型（超级迷你型） 小集电极-发射极饱和电压 出色的线性直流正向增益 易于安装的超小型封装 |