| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 30V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 20V |
| 集电极连续输出电流ICCollector Current(IC) | 20mA |
| 截止频率fTTranstion Frequency(fT) | 600MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 90~180 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | 100mV/0.1V |
| 耗散功率PcPower Dissipation | 150mW/0.15W |
| Description & Applications | HIGH FREQUENCY AMPLIFIER NPN Silicon Epitaxial transistor Micro package High Gain Bandwidth Product Low Output Capacitance |
| 描述与应用 | 高频放大器 NPN硅外延晶体管 微型封装 高增益带宽产品 低输出电容 |