| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 60V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 50V |
| 集电极连续输出电流ICCollector Current(IC) | 150mA/0.15A |
| 截止频率fTTranstion Frequency(fT) | 80MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 350~700 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | 100mV/0.1V |
| 耗散功率PcPower Dissipation | 300mW/0.3W |
| Description & Applications | TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) Audio Frequency General Purpose Amplifier Applications Small package High voltage and high current High hFE Excellent hFE linearity Complementary to 2SA1618 |
| 描述与应用 | 东芝晶体管的硅NPN外延式（PCT的进程） 音频通用放大器应用 小型封装 高电压和高电流 高HFE 优秀HFE线性 与2SA1618互补 |