| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 35V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 30V |
| 集电极连续输出电流ICCollector Current(IC) | 800mA/0.8A |
| 截止频率fTTranstion Frequency(fT) | 120MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 160~320 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | 500mV/0.5V |
| 耗散功率PcPower Dissipation | 200mW/0.2W |
| Description & Applications | TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) AUDIO POWER AMPLIFIER APPLICATIONS High DC Current Gain Complementary to 2SA1621 |
| 描述与应用 | 东芝晶体管的硅NPN外延式（PCT的进程） 音频功率放大器应用 高DC电流增益 与2SA1621互补 |