| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 50V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 20V |
| 集电极连续输出电流ICCollector Current(IC) | 300mA/0.3A |
| 截止频率fTTranstion Frequency(fT) | 30MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 200~700 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | 42mV |
| 耗散功率PcPower Dissipation | 100mW/0.1W |
| Description & Applications | TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) FOR MUTING AND SWITCHING APPLICATIONS High Emitter-Base Voltage High Reverse hFE Low On Resistance High DC Current Gain Small Package |
| 描述与应用 | 东芝晶体管的硅NPN外延式（PCT的进程） 静音和开关应用 高发射极 - 基极电压 高反向HFE 低导通电阻 高DC电流增益 小型封装 |