| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 30V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 30V |
| 集电极连续输出电流ICCollector Current(IC) | 20mA |
| 截止频率fTTranstion Frequency(fT) | 650MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 150 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | |
| 耗散功率PcPower Dissipation | 100mW/0.1W |
| Description & Applications | TOSHIBA Transistor Silicon NPN Epitaxial planar Type TV VHF RF AMPLIFIER APPLICATIONS High Gain Low Noise Excellent Forward AGC Characteristics |
| 描述与应用 | 东芝晶体管NPN硅外延平面型 电视高频射频放大器应用 高增益 低噪声 优秀正向AGC特性 |